MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates
The paper presents the results of the application of MOCVD growth technique for formation of the GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer.The fabricated laser diodes were of micro-striped type designed for the operation under the olea europaea montra electrical pumping.Influence of the Si substr